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DIM200PKM33-A000 Datasheet(PDF) 1 Page - Dynex Semiconductor |
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DIM200PKM33-A000 Datasheet(HTML) 1 Page - Dynex Semiconductor |
1 / 6 page DIM200PKM33-A000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/6 www.dynexsemi.com FEATURES I 10 µs Short Circuit Withstand I High Thermal Cycling Capability I Non Punch Through Silicon I Isolated MMC Base with AlN Substrates APPLICATIONS I Choppers I Traction Auxiliaries The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200PKM33-A000 is a 3300V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 µs short circuit withstand. This device is optimised for applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM200PKM33-A000 Note: When ordering, please use the whole part number. KEY PARAMETERS V CES 3300V V CE(sat) * (typ) 3.2V I C (max) 200A I C(PK) (max) 400A *(measured at the power busbars and not the auxiliary terminals) DIM200PKM33-A000 IGBT Chopper Module Preliminary Information DS5598-1.1 April 2003 Fig. 1 Chopper circuit diagram - upper arm control Fig. 2 Electrical connections - (not to scale) Outline type code: P (See package details for further information) 3(A) 2(C1) 1(E1/K) 8(C1) 5(E1) 4(G1) |
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