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DIM200PKM33-A000 Datasheet(PDF) 1 Page - Dynex Semiconductor

Part # DIM200PKM33-A000
Description  IGBT Chopper Module
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM200PKM33-A000 Datasheet(HTML) 1 Page - Dynex Semiconductor

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DIM200PKM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/6
www.dynexsemi.com
FEATURES
I 10
µs Short Circuit Withstand
I High Thermal Cycling Capability
I Non Punch Through Silicon
I Isolated MMC Base with AlN Substrates
APPLICATIONS
I Choppers
I Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200PKM33-A000 is a 3300V, n channel
enhancement mode insulated gate bipolar transistor (IGBT)
chopper module configured with the upper arm of the bridge
controlled. The IGBT has a wide reverse bias safe operating
area (RBSOA) plus full 10
µs short circuit withstand. This device
is optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PKM33-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
3300V
V
CE(sat) *
(typ)
3.2V
I
C
(max)
200A
I
C(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
DIM200PKM33-A000
IGBT Chopper Module
Preliminary Information
DS5598-1.1 April 2003
Fig. 1 Chopper circuit diagram - upper arm control
Fig. 2 Electrical connections - (not to scale)
Outline type code: P
(See package details for further information)
3(A)
2(C1)
1(E1/K)
8(C1)
5(E1)
4(G1)


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