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DIM200PHM33-F000 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DIM200PHM33-F000 Datasheet(HTML) 7 Page - Dynex Semiconductor |
7 / 9 page DIM200PHM33-F000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/9 www.dynexsemi.com Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area Fig. 9 Diode reverse bias safe operating area Fig. 10 Transient thermal impedance IGBT Ri (˚C/KW) τ i (ms) Diode Ri (˚C/KW) τ i (ms) 1 1.79 0.13 3.58 0.13 2 11.26 5.80 22.52 5.80 3 15.77 48.03 31.53 48.03 4 19.11 248.53 38.23 248.53 Diode Transistor 0.1 1 10 100 0.001 0.01 1 0.1 10 Pulse width, tp - (s) 0 100 200 300 400 500 0 500 1000 1500 2000 2500 3000 3500 Collector emitter voltage, Vce - (V) Conditions: Tcase = 125˚C, Vge = ±15V, Rg(off) = 16.5 Ohms, Cge = 56nF Module Chip 0 50 100 150 200 250 300 350 0 500 1000 1500 2000 2500 3000 3500 Reverse voltage, VR - (V) Tj = 125˚C 0 50 100 150 200 250 300 350 400 450 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Forward voltage, VF - (V) Tj = 25˚C Tj = 125˚C |
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