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BS107A Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BS107A
Description  N-channel enhancement mode vertical D-MOS transistor
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BS107A Datasheet(HTML) 3 Page - NXP Semiconductors

   
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April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BS107A
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for collector lead
min. 10 mm
× 10 mm.
Drain-source voltage
VDS
max.
200 V
Gate-source voltage (open drain)
± V
GSO
max.
20 V
Drain current (DC)
ID
max.
250 mA
Drain current (peak)
IDM
max.
500 mA
Total power dissipation up to Tcase = 25 °CPtot
max.
0.6 W
Storage temperature
Tstg
−55 to +150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient (note 1)
Rth j-a
=
125 K/W


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