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BS107 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BS107
Description  N-channel enhancement mode vertical D-MOS transistor
Download  12 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BS107 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BS107
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
200
V
±VGSO
gate-source voltage
open drain
20
V
ID
drain current
DC
150
mA
IDM
drain current
peak
300
mA
Ptot
total power dissipation
up to Tamb =25 °C
830
mW
Tstg
storage temperature range
−65
150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
MAX.
UNIT
Rth j-a
from junction to ambient
150
K/W


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