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MMT05B350T3 Datasheet(PDF) 1 Page - ON Semiconductor |
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MMT05B350T3 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 2 1 Publication Order Number: MMT05B350T3/D MMT05B350T3 Preferred Devices Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover−triggered crowbar protectors. Turn−off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. Features • High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled Temperature Environments • The MMT05B350T3 is used to help equipment meet various regulatory requirements including: Bellcore 1089, ITU K.20 and K.21, IEC 950, UL 1459 and 1950 and FCC Part 68 • Bidirectional Protection in a Single Device • Little Change of Voltage Limit with Transient Amplitude or Rate • Freedom from Wearout Mechanisms Present in Non−Semiconductor Devices • Fail−Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation • Surface Mount Technology (SMT) • Indicates UL Recognized − File #E210057 • Pb−Free Package is Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Off−State Voltage − Maximum VDM 300 V Maximum Pulse Surge Short Circuit Current Non−Repetitive Double Exponential Decay Waveform (−25 °C Initial Temperature) (Notes 1 and 2) 2 x 10 msec 8 x 20 msec 10 x 160 msec 10 x 360 msec 10 x 560 msec 10 x 700 msec 10 x 1000 msec IPPS1 IPPS2 IPPS3 IPPS4 IPPS5 IPPS6 IPPS7 ±150 ±150 ±100 ±100 ±70 ±70 ±50 A(pk) Non−Repetitive Peak On−State Current 60 Hz Full Sign Wave ITSM 32 A(pk) Maximum Non−Repetitive Rate of Change of On−State Current Exponential Waveform, < 100 A di/dt "300 A/ ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. BIDIRECTIONAL TSPD 50 AMP SURGE, 350 VOLTS Device Package Shipping† ORDERING INFORMATION MMT05B350T3 SMB 12 mm Tape & Reel (2.5 K/Reel) MT1 MT2 SMB (No Polarity) (Essentially JEDEC DO−214AA) CASE 403C ( ) MARKING DIAGRAMS http://onsemi.com Preferred devices are recommended choices for future use and best overall value. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. MMT05B350T3G SMB (Pb−Free) 12 mm Tape & Reel (2.5 K/Reel) A = Assembly Location Y = Year WW = Work Week RPBM = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) AYWW RPBM G G |
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