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MJL0281A Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MJL0281A
Description  Complementary NPN-PNP Power Bipolar Transistors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJL0281A Datasheet(HTML) 2 Page - ON Semiconductor

  MJL0281A Datasheet HTML 1Page - ON Semiconductor MJL0281A Datasheet HTML 2Page - ON Semiconductor MJL0281A Datasheet HTML 3Page - ON Semiconductor MJL0281A Datasheet HTML 4Page - ON Semiconductor MJL0281A Datasheet HTML 5Page - ON Semiconductor  
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MJL0281A (NPN) MJL0302A (PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.69
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 30 mA, IB = 0)
VCEO(sus)
260
V
Collector Cutoff Current
(VCB = 260 V, IE = 0)
ICBO
10
mA
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
5.0
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
(IC = 3.0 A, VCE = 5.0 V)
hFE
75
75
75
150
150
150
Collector−Emitter Saturation Voltage
(IC = 5.0 A, IB = 0.5 A)
VCE(sat)
1.0
V
Base−Emitter On Voltage
(IC = 5.0 A, VCE = 5.0 V)
VBE(on)
1.2
V
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz)
fT
30
MHz
Output Capacitance
(VCB = 10 V, IE = 0, ftest = 1.0 MHz)
Cob
400
pF
200
0
TC, CASE TEMPERATURE (°C)
40
60
100
120
160
80
140
20
Figure 1. Power Derating
0
20
40
60
80
100
140
120
0.01
0.1
1
10
100
1
10
100
1000
1.0 ms
10 ms
5.0 ms
100 ms
DC
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Safe Operating Area
160
180


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