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MAC97 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MAC97
Description  Sensitive Gate Triacs Silicon Bidirectional Thyristors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MAC97 Datasheet(HTML) 2 Page - ON Semiconductor

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MAC97 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
75
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = +110°C
IDRM, IRRM
10
100
mA
mA
ON CHARACTERISTICS
Peak On−State Voltage
(ITM = ".85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
VTM
1.9
V
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
IGT
5.0
5.0
5.0
7.0
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
VGT
.66
.77
.84
.88
2.0
2.0
2.0
2.5
V
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W, TJ = 110°C)
All Four Quadrants
VGD
0.1
V
Holding Current
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
1.5
10
mA
Turn-On Time
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)
tgt
2.0
ms
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Commutation Voltage
(VD = Rated VDRM, ITM = .84 A,
Commutating di/dt = .3 A/ms, Gate Unenergized, TC = 50°C)
dV/dt(c)
5.0
V/
ms
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, TC = 110°C, Gate Open, Exponential Waveform
dv/dt
25
V/
ms


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