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MAC15S Datasheet(PDF) 2 Page - ON Semiconductor

Part No. MAC15S
Description  Sensitive Gate Triacs Silicon Bidirectional Thyristors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MAC15S Datasheet(HTML) 2 Page - ON Semiconductor

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MAC15SD, MAC15SM, MAC15SN
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
2.0
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 Seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2) (ITM = "21A)
VTM
1.8
V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
2.0
3.0
3.0
5.0
5.0
5.0
mA
Hold Current (VD = 12 V, Gate Open, Initiating Current = "150mA)
IH
3.0
10
mA
Latching Current (VD = 24V, IG = 5mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
5.0
10
5.0
15
20
15
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
0.45
0.45
0.45
0.62
0.60
0.65
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400V, ITM = 3.5A, Commutating dv/dt = 10Vm/sec,
Gate Open, TJ = 110°C, f= 500Hz, Snubber: CS = 0.01 mF, RS =15W, see Figure 15)
(di/dt)c
8.0
10
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = Rate VDRM, Exponential Waveform, RGK = 510W, TJ = 110°C)
dv/dt
25
75
V/
ms
2. Pulse Test: Pulse Width
≤ 2.0 ms, Duty Cycle ≤ 2%.


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