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EMG2DXV5T1 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. EMG2DXV5T1
Description  Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

EMG2DXV5T1 Datasheet(HTML) 2 Page - ON Semiconductor

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EMG2DXV5T1, EMG5DXV5T1
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
EMG2DXV5T1
SOT−553
UP
47
47
EMG5DXV5T1
SOT−553
UF
10
47
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Q1 & Q2)
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)EMG2DXV5T1
EMG5DXV5T1
IEBO
0.1
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS (Q1 & Q2) (Note 3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
EMG2DXV5T1
EMG5DXV5T1
hFE
80
80
140
140
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
VCE(sat)
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
EMG2DXV5T1
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
EMG5DXV5T1
VOL
0.2
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
EMG2DXV5T1
EMG5DXV5T1
R1
32.9
7.0
47
10
61.1
13
k
W
Resistor Ratio
EMG2DXV5T1
EMG5DXV5T1
R1/R2
0.8
0.17
1.0
0.21
1.2
0.25
3. Pulse Test: Pulse Width < 300
ms, Duty Cycle < 2.0%
Figure 1. Derating Curve
350
200
150
100
50
0
−50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
RqJA = 370°C/W
250
300


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