EMF5XV6T5 datasheet(4/6 Pages) ONSEMI | Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

Part No.	EMF5XV6T5

Description	Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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EMF5XV6T5

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0.1

0.01

300

200

100

600

TA = −55°C

°C

125

°C

0.001

500

VCE = 1.0 V

400

0.2

0.4

0.6

0.8

1.2

0.1

0.01

0.001

0.1

0.01

0.001

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 8. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 9. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Collector Emitter Saturation Voltage

vs Base Current

IC, COLLECTOR CURRENT (AMPS)

0.001

0.1

0.001

0.1

0.01

0.1

0.01

0.001

0.1

0.01

IC, COLLECTOR CURRENT (AMPS)

0.01

TA = 25°C

IC = 1.0 A

500 mA

100 mA

50 mA

10 mA

5.0 mA

Figure 12. Base Emitter Saturation Voltage vs.

Collector Current

0.1

0.01

0.001

0.0001

0.00001

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.1

IB, BASE CURRENT (AMPS)

0.01

IC/IB = 200

100

TA = 25°C

°C

TA = 125°C

−55

°C

IC/IB = 100

IC/IB = 50

°C

TA = 125°C

−55

°C

TA = 125°C

−55

°C

250 mA

TYPICAL ELECTRICAL CHARACTERISTICS FOR Q2

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