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EMD5DXV6T1 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. EMD5DXV6T1
Description  Dual Bias Resistor Transistors
Download  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

EMD5DXV6T1 Datasheet(HTML) 2 Page - ON Semiconductor

  EMD5DXV6T1 Datasheet HTML 1Page - ON Semiconductor EMD5DXV6T1 Datasheet HTML 2Page - ON Semiconductor EMD5DXV6T1 Datasheet HTML 3Page - ON Semiconductor EMD5DXV6T1 Datasheet HTML 4Page - ON Semiconductor EMD5DXV6T1 Datasheet HTML 5Page - ON Semiconductor EMD5DXV6T1 Datasheet HTML 6Page - ON Semiconductor EMD5DXV6T1 Datasheet HTML 7Page - ON Semiconductor EMD5DXV6T1 Datasheet HTML 8Page - ON Semiconductor  
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EMD5DXV6T1, EMD5DXV6T5
http://onsemi.com
2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
357
(Note 1)
2.9
(Note 1)
mW
mW/
°C
Thermal Resistance
Junction-to-Ambient
RqJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
500
(Note 1)
4.0
(Note 1)
mW
mW/
°C
Thermal Resistance
Junction-to-Ambient
RqJA
250
(Note 1)
°C/W
Junction and Storage Temperature
TJ, Tstg
− 55 to
+150
°C
1. FR−4 @ Minimum Pad


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