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EMD4DXV6T1 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. EMD4DXV6T1
Description  Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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EMD4DXV6T1 Datasheet(HTML) 2 Page - ON Semiconductor

   
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EMD4DXV6T1, EMD4DXV6T5
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
ICEO
500
nAdc
Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA)
IEBO
0.2
mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
hFE
80
140
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
VCE(SAT)
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
7.0
10
13
k
W
Resistor Ratio
R1/R2
0.17
0.21
0.25
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
ICEO
500
nAdc
Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA)
IEBO
0.1
mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
hFE
80
140
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
VCE(SAT)
0.25
Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
32.9
47
61.1
k
W
Resistor Ratio
R1/R2
0.8
1.0
1.2
Figure 1. Derating Curve
250
200
150
100
50
0
−50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
RqJA = 833°C/W


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