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DTC114EM3T5G Datasheet(PDF) 2 Page - ON Semiconductor

Part No. DTC114EM3T5G
Description  Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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DTC114EM3T5G Datasheet(HTML) 2 Page - ON Semiconductor

 
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DTC114EM3T5G Series
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Package
Shipping
DTC114EM3T5G
8A
10
10
SOT−723
(Pb−Free)
8000/Tape & Reel
DTC124EM3T5G
8B
22
22
DTC144EM3T5G
8C
47
47
DTC114YM3T5G
8D
10
47
DTC114TM3T5G
8E
10
DTC143TM3T5G
8F
4.7
DTC123EM3T5G
8H
2.2
2.2
DTC143EM3T5G
8J
4.7
4.7
DTC143ZM3T5G*
8K
4.7
47
DTC124XM3T5G*
8L
22
47
DTC123JM3T5G
8M
2.2
47
DTC115EM3T5G
8N
100
100
DTC144WM3T5G*
8P
47
22
DTC144TM3T5G
8T
47
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Available upon request.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1) @ TA = 25°C
Derate above 25
°C
PD
260
2.0
mW
mW/
°C
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
480
°C/W
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25°C
Derate above 25
°C
PD
600
4.8
mW
mW/
°C
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
205
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0
× 1.0 inch pad.


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