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DTA114EM3T5G Datasheet(PDF) 2 Page - ON Semiconductor

Part No. DTA114EM3T5G
Description  Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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DTA114EM3T5G Datasheet(HTML) 2 Page - ON Semiconductor

 
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DTA114EM3T5G Series
http://onsemi.com
2
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Package
Shipping
DTA114EM3T5G
DTA124EM3T5G*
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G*
DTA123EM3T5G*
DTA143EM3T5G*
DTA143ZM3T5G*
DTA124XM3T5G
DTA123JM3T5G*
DTA115EM3T5G
DTA144WM3T5G*
6A
6B
6C
6D
6E
6F
6H
6J
6K
6L
6M
6N
6P
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
10
22
47
47
2.2
4.7
47
47
47
100
22
SOT−723
(Pb−Free)
8000/Tape & Reel
*Available upon request
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1.) @ TA = 25°C
Derate above 25
°C
PD
260
2.0
mW
mW/
°C
Thermal Resistance, Junction to Ambient (Note 1.)
RqJA
480
°C/W
Total Device Dissipation,
FR−4 Board (Note 2.) @ TA = 25°C
Derate above 25
°C
PD
600
4.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient (Note 2.)
RqJA
205
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0
× 1.0 Inch Pad


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