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DF3A6.8FUT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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DF3A6.8FUT1 Datasheet(HTML) 2 Page - ON Semiconductor |
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DF3A6.8FUT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT ZZK Maximum Zener Impedance @ IZK Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol Conditions Min Typ Max Unit Forward Voltage VF IF = 10 mA 0.8 0.9 V Zener Voltage (Note 4) VZ IZT = 5 mA 6.4 6.8 7.2 V Operating Resistance (Note 5) ZZK IZK = 0.5 mA 200 W ZZT IZT = 5 mA 50 W Reverse Current IR1 VRWM = 5 V 0.5 mA Clamping Voltage VC IPP = 2.0 A (Figure 1) IPP = 9.37 A (Figure 2) 9.6 16 V V ESD Protection Human Body Model (HBM) Contact − IEC61000−4−2 Air Discharge 16 30 30 kV 4. VZ measured at pulse test current IZT at an ambient temperature of 25°C. 5. ZZT and ZZK is measured by dividing the AC voltage drop across the device by the AC current supplied. AC frequency = 1.0 kHz. |
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