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CS5308 Datasheet(PDF) 5 Page - ON Semiconductor

Part No. CS5308
Description  Two−Phase PWM Controller with Integrated Gate Drivers for VRM 8.5
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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CS5308 Datasheet(HTML) 5 Page - ON Semiconductor

 
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CS5308
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (continued) (0°C < TA < 70°C; 0°C < TJ < 125°C; 9.0 V < VCCH1 = VCCH2 < 20 V;
4.5 V < VCCL =VCCL12 < 14 V; CGATE = 3.3 nF, RROSC = 32.4 k, CCOMP = 0.1 mF, CREF = 0.1 mF, DAC Code 01000 (1.65 V),
CVCC = 0.1 mF; unless otherwise specified.)
Characteristic
Unit
Max
Typ
Min
Test Conditions
Power Good Output
Power Good Fault Delay
CSREF = DAC to DAC ± 15%
25
50
100
ms
PWRGD Low Voltage
IPWRGD = 4.0 mA
250
400
mV
Output Leakage Current
VPWRGD = 5.5 V
0.1
10
mA
Lower Threshold
−15
−12
−9.0
%
Upper Threshold
9.0
12
15
%
Voltage Feedback Error Amplifier
VFB Bias Current, (Note 2.)
0.9 V < VFB < 1.9 V
9.4
10.3
11.1
mA
COMP Source Current
COMP = 0.5 V to 2.0 V; VFB = 1.6 V
15
30
60
mA
COMP Sink Current
COMP = 0.5 V to 2.0 V; VFB = 1.7 V
15
30
60
mA
COMP Discharge Threshold Voltage
0.20
0.27
0.34
V
Transconductance
−10 mA < ICOMP < +10 mA
32
mmho
Output Impedance
2.5
MW
Open Loop DC Gain
Note 3.
60
90
dB
Unity Gain Bandwidth
0.01 mF
400
kHz
PSRR @ 1.0 kHz
70
dB
COMP Max Voltage
VFB = 1.6 V COMP Open
2.4
2.7
V
COMP Min Voltage
VFB = 1.7 V COMP Open
0.1
0.2
V
Hiccup Latch Discharge Current
2.0
5.0
10
mA
COMP Discharge Ratio
4.0
6.0
10
PWM Comparators
Minimum Pulse Width
CS1 = CS2 = CSREF
350
475
ns
Channel Startup Offset
V(CS1) = V(CS2) = V(VFB) = V(CSREF) = 0 V;
Measure V(COMP) when GATE(H)1,2 switch
high
0.3
0.4
0.5
V
VTT Power Good
VTT Threshold
1.03
1.05
1.07
V
VTTPGD Low Voltage
IVTTPGD = 4.0 mA
0.25
0.4
V
VTTPGD Leakage Current
VTTPGD = 5.5 V
0.1
10
mA
VTTCT Threshold Voltage
1.0
1.05
1.10
V
VTTCT Charge Current
Note 2.
15
30
45
mA
VTTCT Discharge Threshold
0.24
0.32
0.38
V
GATES
High Voltage (AC)
Measure VCCx − GATEx, Note 3.
0
1.0
V
Low Voltage (AC)
Measure GATEx, Note 3.
0
0.5
V
Rise Time GATEx
1.0 V < GATE < 8.0 V; VCCx = 10 V
35
80
ns
2. The VFB Bias Current and VTTCT Charge Currents change with the value of ROSC per Figure 4.
3. Guaranteed by design. Not tested in production.


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