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2SC5658M3T5G Datasheet(PDF) 1 Page - Vaishali Semiconductor |
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2SC5658M3T5G Datasheet(HTML) 1 Page - Vaishali Semiconductor |
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1 / 4 page  © Semiconductor Components Industries, LLC, 2004 February, 2004 − Rev. 0 1 Publication Order Number: 2SC5658M3/D 2SC5658M3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board Space • High h FE, 210 −460 (typical) • Low V CE(sat), < 0.5 V • ESD Performance: Human Body Model; u 2000 V, Machine Model; u 200 V • Available in 8 mm, 7-inch/3000 Unit Tape and Reel • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 5.0 Vdc Collector Current − Continuous IC 100 mAdc THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation (Note 1) PD 260 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg − 55 ~ + 150 °C 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. http://onsemi.com Device Package Shipping† ORDERING INFORMATION 2SC5658M3T5G SOT−723 3000/Tape & Reel SOT−723 CASE 631AA MARKING DIAGRAM 1 2 3 XX M XX = Specific Device Code M = Date Code COLLECTOR 3 1 BASE 2 EMITTER NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. |
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