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2SA2029M3 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2SA2029M3
Description  PNP Silicon General Purpose Amplifier Transistor
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SA2029M3 Datasheet(HTML) 2 Page - ON Semiconductor

  2SA2029M3 Datasheet HTML 1Page - ON Semiconductor 2SA2029M3 Datasheet HTML 2Page - ON Semiconductor 2SA2029M3 Datasheet HTML 3Page - ON Semiconductor 2SA2029M3 Datasheet HTML 4Page - ON Semiconductor  
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2SA2029M3T5G
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
Vdc
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
Vdc
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
Vdc
Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0)
ICBO
−0.5
nA
Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0)
IEBO
−0.1
mA
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
−0.5
Vdc
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
hFE
120
560
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
fT
140
MHz
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz)
COB
3.5
pF
2. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.


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