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2SA2029M3 Datasheet(PDF) 2 Page - ON Semiconductor |
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2SA2029M3 Datasheet(HTML) 2 Page - ON Semiconductor |
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2SA2029M3T5G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0) V(BR)EBO −6.0 − − Vdc Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO − − −0.5 nA Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0) IEBO − − −0.1 mA Collector−Emitter Saturation Voltage (Note 2) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) − − −0.5 Vdc DC Current Gain (Note 2) (VCE = −6.0 Vdc, IC = −1.0 mAdc) hFE 120 − 560 − Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) fT − 140 − MHz Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) COB − 3.5 − pF 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. |
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