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ADG701L Datasheet(PDF) 5 Page - Analog Devices

Part No. ADG701L
Description  CMOS Low Voltage 2 OHM SPST Switches
Download  12 Pages
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Maker  AD [Analog Devices]
Homepage  http://www.analog.com
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ADG701L Datasheet(HTML) 5 Page - Analog Devices

 
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ADG701L/ADG702L
Rev. 0 | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
VDD to GND
−0.3 V to +7 V
Analog, Digital Inputs1
−0.3 V to VDD + 0.3 V or 30 mA,
whichever occurs first
Continuous Current, S or D
30 mA
Peak Current, S or D
100 mA, pulsed at 1 ms,
10% duty cycle maximum
Operating Temperature Range
Industrial (B Version)
−40°C to +85°C
Storage Temperature Range
−65°C to +150°C
Junction Temperature
150°C
MSOP Package, Power Dissipation
315 mW
θJA Thermal Impedance
206°C/W
θJC Thermal Impedance
44°C/W
SOT-23 Package, Power Dissipation
282 mW
θJA Thermal Impedance
229.6°C/W
θJC Thermal Impedance
91.99°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
Lead-free Reflow Soldering
Peak Temperature
260 (+0/−5)°C
Time at Peak Temperature
10 sec to 40 sec
ESD
2 kV
1 Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degrada-
tion or loss of functionality.


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