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BLW98 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BLW98
Description  UHF linear power transistor
Download  13 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLW98 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
BLW98
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers of TV
transposers and transmitters in band
IV-V, as well as for driver stages in
tube systems.
FEATURES:
• diffused emitter ballasting resistors
for an optimum temperature profile;
• gold sandwich metallization
ensures excellent reliability.
The transistor has a 1
4" capstan
envelope with ceramic cap. All leads
are isolated from the stud.
QUICK REFERENCE DATA
R.F. performance in linear amplifier
Note
1. Three-tone test method (vision carrier
−8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
MODE OF OPERATION
fvision
MHz
VCE
V
IC
mA
Th
°C
dim(1)
dB
Po sync (1)
W
Gp
dB
class-A
860
25
850
70
−60
>
3,5
>
6,5
class-A
860
25
850
25
−60
typ.
4,4
typ.
7,0
PIN CONFIGURATION
Fig.1 Simplified outline. SOT122A.
handbook, halfpage
Top view
MBK187
3
1
2
4
PINNING - SOT122A.
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.


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