Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

SSI2N80A Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. SSI2N80A
Description  Advanced Power MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo 

SSI2N80A Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
N-CHANNEL
POWER MOSFET
Electrical Characteristics (T
C=25
ΟC
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
∆BV/∆T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
ΟC
V
nA
µA
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS=0V,ID=250µA
I
D=250µA
See Fig 7
V
DS=5V,ID=250µA
V
GS=30V
V
GS=-30V
V
DS=800V
V
DS=640V,TC=125
ΟC
V
GS=10V,ID=0.85A
*
V
DS=50V,ID=0.85A
V
DD=400V,ID=2A,
R
G=16 Ω
See Fig 13
V
DS=640V,VGS=10V,
I
D=2A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS=0V,VDS=25V,f =1MHz
See Fig 5
O
4
O
5
O
4
O
4
O
4
O
5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
T
J=25
ΟC,I
S=1.7A,VGS=0V
T
J=25
ΟC,I
F=2A
di
F/dt=100A/µs
O
4
O
4
O
1
SSW/I2N80A
800
--
2.0
--
--
--
--
--
1.06
--
--
--
--
--
45
19
15
22
38
18
22
3.8
11.6
--
--
3.5
100
-100
25
250
6.0
--
550
55
25
40
55
85
45
30
--
--
1.56
425
--
--
--
290
0.8
2
8
1.4
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=100mH, I
AS=2A, VDD=50V, RG=27, Starting T J =25
ΟC
I
SD
2A, di/dt 90A/
µs, V
DD
BV
DSS , Starting T J =25
ΟC
Pulse Test : Pulse Width = 250
µs, Duty Cycle
2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5


Html Pages

1  2  3  4  5  6  7 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
SFR9220Advanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRLR230AAdvanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
SFR2955Advanced Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
IRFP150VPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
NTTD4401FFETKY Power MOSFET and Schottky Diode 1 2 3 4 5 MoreON Semiconductor
IRL1004SPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
NTGS4111PPower MOSFET -30 V -4.7 A Single P-Channel TSOP-6 1 2 3 4 5 ON Semiconductor
IRLZ4SHEXFET POWER MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF730ASPBFHEXFET Power MOSFET SMPS MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF3704ZCSPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn