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SFR2955 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. SFR2955
Description  Advanced Power MOSFET
Download  7 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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SFR2955 Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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P-CHANNEL
POWER MOSFET
Electrical Characteristics (T
C=25
oC unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
∆BV/∆T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
oC
V
nA
µA
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS=0V,ID=-250µA
I
D=-250µA
See Fig 7
V
DS=-5V,ID=-250µA
V
GS=-20V
V
GS=20V
V
DS=-60V
V
DS=-48V,TC=125
oC
V
GS=-10V,ID=-3.8A
V
DS=-30V,ID=-3.8A
V
DD=-30V,ID=-9.4A,
R
G=18
See Fig 13
V
DS=-48V,VGS=-10V,
I
D=-9.4A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS=0V,VDS=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
T
J=25
oC,I
S=-7.6A,VGS=0V
T
J=25
oC,I
F=-9.4A
di
F/dt=100A/µs
O
4
O
4
O
4
O
5
O
4
O
5
O
4
O
4
O
1
SFR/U2955
-60
--
-2.0
--
--
--
--
--
-0.04
--
--
--
--
--
140
40
11
21
29
20
15
2.9
6.0
--
--
-4.0
-100
100
-10
-100
0.3
--
600
215
60
30
50
65
50
19
--
--
3.6
465
--
--
--
80
0.22
-7.6
-30
-3.8
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=2.0mH, I
AS=-7.6A, VDD=-25V, RG=27Ω*, Starting T J =25
oC
I
SD
-9.4A, di/dt
250A/
µs, V
DD
BV
DSS , Starting T J =25
oC
Pulse Test : Pulse Width = 250
µs, Duty Cycle
2%
Essentially Independent of Operating Temperature
O
1
O
2
O
3
O
4
O
5
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