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IRLR230A Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. IRLR230A
Description  Advanced Power MOSFET
Download  7 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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IRLR230A Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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IRLR/U230A
200
--
1.0
--
--
--
--
--
0.25
--
--
--
--
--
90
44
8
6
30
9
18.6
3.5
8.3
--
--
2.0
100
-100
10
100
0.4
--
755
115
55
25
20
70
30
27
--
--
4.2
580
--
--
--
158
0.78
7.5
26
1.5
--
--
Notes;
Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
L=1mH, I
AS=7.5A, VDD=50V, RG=27, Starting TJ =25°C
I
SD ≤ 9A, di/dt ≤ 220A/µs, VDD ≤ BVDSS , Starting TJ =25°C
Pulse Test: Pulse Width = 250
µs, Duty Cycle ≤ 2%
Essentially Independent of Operating Temperature
2
1&+$11(/
32:(5 026)(7
Electrical Characteristics (T
C=25°C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
BVDSS
∆BV/∆T
J
VGS(th)
RDS(on)
IGSS
IDSS
V
V/
°C
V
nA
µA
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
VGS=0V,ID=250µA
ID=250µA
See Fig 7
VDS=5V,ID=250µA
VGS=20V
VGS=-20V
VDS=200V
VDS=160V,TC=125°C
VGS=5V,ID=3.75A
(4)
VDS=40V,ID=4.5A
(4)
VDD=100V,ID=9A,
RG=6Ω
See Fig 13
(4) (5)
VDS=160V,VGS=5V,
ID=9A
See Fig 6 & Fig 12 (4) (5)
Drain-to-Source Leakage Current
VGS=0V,VDS=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
IS
ISM
VSD
trr
Qrr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
TJ=25°C,IS=7.5A,VGS=0V
TJ=25°C,IF=9A
diF/dt=100A/µs
(4)


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