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IRL3502SPBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRL3502SPBF
Description  HEXFET Power MOSFET
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRL3502SPBF Datasheet(HTML) 1 Page - International Rectifier

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3/18/04
IRL3502SPbF
HEXFET® Power MOSFET
PD - 95126
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
S
D
G
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 4.5V…
110†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 4.5V…
67
A
IDM
Pulsed Drain Current …
420
PD @TC = 25°C
Power Dissipation
140
W
Linear Derating Factor
1.1
W/°C
VGS
Gate-to-Source Voltage
± 10
V
VGSM
Gate-to-Source Voltage
14
V
(Start Up Transient, tp = 100µs)
EAS
Single Pulse Avalanche Energy‚…
390
mJ
IAR
Avalanche Current
64
A
EAR
Repetitive Avalanche Energy
14
mJ
dv/dt
Peak Diode Recovery dv/dt ƒ…
5.0
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
VDSS = 20V
RDS(on) = 0.007Ω
ID = 110A†
Description
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.89
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
°C/W
Thermal Resistance
2
D Pak
l
Advanced Process Technology
l
Surface Mount
l
Optimized for 4.5V-7.0V Gate Drive
l
Ideal for CPU Core DC-DC Converters
l
Fast Switching
l
Lead-Free


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