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PJD06N03 Datasheet(PDF) 4 Page - Pan Jit International Inc.

Part No. PJD06N03
Description  25V N-Channel Enhancement Mode MOSFET
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Maker  PANJIT [Pan Jit International Inc.]
Homepage  http://www.panjit.com.tw
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PJD06N03 Datasheet(HTML) 4 Page - Pan Jit International Inc.

   
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PAGE . 4
STAD-JUL.19.2006
PJD06N03
Fig.6 - Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
Qgd
Qgs
Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
V =0V
GS
T =125 C
J
O
T =25 C
J
O
T =-55 C
J
O
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
-50
-25
0
25
50
75
100
125
150
TJ - Junction Tem perature (
oC)
I =250uA
D
25
26
27
28
29
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (
oC)
I =250uA
D
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Qg - GateCharge(nC)
V =15V
I =15A
DS
D
Copyright PanJit International, Inc 2006
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
LEGALSTATEMENT


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