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BLW34 Datasheet(PDF) 7 Page - NXP Semiconductors

Part No. BLW34
Description  UHF linear power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLW34 Datasheet(HTML) 7 Page - NXP Semiconductors

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August 1986
7
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
APPLICATION INFORMATION
Note
1. Three-tone test method (vision carrier
−8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
List of components:
fvision (MHz)
VCE (V)
IC (mA)
Th (°C)
dim (dB) (1)
Po sync (W) (1)
Gp (dB)
860
25
600
70
−60
>
1,8
>
9
860
25
600
70
−60
typ.
1,9
typ.
10,2
860
25
600
25
−60
typ.
2,15
typ.
10,2
C1 = C5 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C2 = C6 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 13,5 mm and 46 mm
respectively from transistor edge
C3 = C4 = 2 pF multilayer ceramic chip capacitor (ATC 100A-2RO-C-PX-50)
C7 = C10 = 1 nF chip capacitor
C8 = 100 nF polyester capacitor
C9 = C12 = 470 nF polyester capacitor
C11 = 10 nF polyester capacitor
C13 = 3,3
µF/40 V solid aluminium electrolytic capacitor
L1 = stripline (9,2 mm
× 7,0 mm)
L2 = stripline (14,2 mm
× 7,0 mm)
L3 = micro choke 0,47
µH (cat. no. 4322 057 04770)
L4 = stripline (see Fig.9 printed-circuit board layout)
L5 = 34 mm straight Cu wire (1,0 mm); height above print 3,3 mm
L6 = stripline (41,0 mm
× 7,0 mm)
L7 = stripline (8,7 mm
× 7,0 mm)
L1; L2; L4; L6 and L7 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric
(
ε
r = 2,74); thickness 1/16".
Component layout and printed-circuit board for 860 MHz test circuit are shown in Fig.9. For bias circuit see Fig.10.
Fig.8 Test circuit at fvision = 860 MHz.
handbook, full pagewidth
MGP460
+VBB
+VCC
50
L1
L2
T.U.T.
C1
C3
L3
L5
C7
C8
C9
C10
C11
C12
C13
C4
C6
C2
L7
C5
L6
L4
50


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