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MT3S40T Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. MT3S40T
Description  VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
Download  4 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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MT3S40T Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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MT3S40T
2
2002-08-19
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE=3V, IC=20mA, f=2GHz
13
17
-
GHz
|S21e|
2(1)
VCE=3V, IC=20mA, f=1GHz
14.5
16.5
-
dB
Insertion Gain
|S21e|
2(2)
VCE=3V, IC=20mA, f=2GHz
9
11
-
dB
NF(1)
VCE=3V, IC=5mA, f=1GHz
-
0.9
-
dB
Noise Figure
NF(2)
VCE=3V, IC=5mA, f=2GHz
-
1.2
1.8
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB=8V, IE=0
-
-
1
µA
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
-
-
1
µA
DC Current Gain
hFE
VCE=3V, IC=20mA
70
-
140
-
Output Capacitance
Cob
VCB=1V, IE=0, f=1MHz
-
0.77
1.2
pF
Reverse Transistor Capacitance
Cre
VCB=1V, IE=0, f=1MHz (Note 1)
-
0.44
0.8
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.


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