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BLW32 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BLW32
Description  UHF linear power transistor
Download  12 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLW32 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE =0
VCESM
max.
50 V
open base
VCEO
max.
30 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current
d.c. or average
IC
max.
650 mA
(peak value); f
> 1 MHz
ICM
max.
1000 mA
Total power dissipation up to Tmb =25 °CPtot
max.
10,8 W
Storage temperature
Tstg
−65 to +150 °C
Operating junction temperature
Tj
max.
200
°C
Fig.2 D.C. SOAR.
(1) Second breakdown limit (independent of temperature).
handbook, halfpage
MGP429
1
10−1
1
10
102
VCE (V)
IC
(A)
Tmb = 25 °C
Th = 70 °C
(1)
Fig.3 Power derating curve vs. temperature.
handbook, halfpage
0
15
10
5
0
100
MGP430
50
Th (°C)
Ptot
(W)
THERMAL RESISTANCE (see Fig.4)
From junction to mounting base
(dissipation = 3,75 W; Tmb = 72,3 °C; i.e. Th =70 °C)
Rth j-mb
=
15,0 K/W
From mounting base to heatsink
Rth mb-h
=
0,6 K/W


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