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BLW32 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BLW32
Description  UHF linear power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLW32 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The
excellent d.c. dissipation
properties for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a 1
4" capstan
envelope with ceramic cap.
QUICK REFERENCE DATA
R.F. performance
Note
1. Three-tone test method (vision carrier
−8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
MODE OF OPERATION
fvision
MHz
VCE
V
IC
mA
Th
°C
dim (1)
dB
Po sync (1)
W
Gp
dB
class-A; linear amplifier
860
25
150
70
−60
>
0,5
>
11
860
25
150
25
−60
typ.
0,63 typ.
12,2
PIN CONFIGURATION
Fig.1 Simplified outline. SOT122A.
handbook, halfpage
Top view
MBK187
3
1
2
4
PINNING - SOT122A.
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.


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