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BLW32 Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. BLW32
Description  UHF linear power transistor
Download  12 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLW32 Datasheet(HTML) 5 Page - NXP Semiconductors

 
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August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
CHARACTERISTICS
Tj =25 °C unless otherwise specified
Notes
1. Measured under pulse conditions: tp ≤ 300 µs; δ≤ 0,02.
2. Measured under pulse conditions: tp ≤ 50 µs; δ≤ 0,01.
Collector-emitter breakdown voltage
VBE = 0; IC = 2 mA
V(BR)CES
>
50 V
open base; IC = 15 mA
V(BR)CEO
>
30 V
Emitter-base breakdown voltage
open collector; IE = 1 mA
V(BR)EBO
>
4V
Collector cut-off current
VBE = 0; VCE = 30 V
ICES
<
0,5 mA
VBE = 0; VCE = 30 V; Tj = 175 °CICES
<
1,2 mA
D.C. current gain (1)
>
typ.
20
40
IC = 150 mA; VCE = 25 V
hFE
IC = 150 mA; VCE = 25 V; Tj = 175 °ChFE
<
120
Collector-emitter saturation voltage (1)
IC = 300 mA; IB = 30 mA
VCEsat
typ.
500 mV
Transition frequency at f = 500 MHz (2)
−IE = 150 mA; VCB = 25 V
fT
typ.
3,5 GHz
−I
E = 300 mA; VCB = 25 V
fT
typ.
3,4 GHz
Collector capacitance at f = 1 MHz
IE =Ie = 0; VCB = 25 V
Cc
typ.
3,7 pF
Feedback capacitance at f = 1 MHz
IC = 10 mA; VCE = 25 V
Cre
typ.
1,9 pF
Collector-stud capacitance
Ccs
typ.
1,2 pF


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