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BLV99 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BLV99
Description  UHF power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLV99 Datasheet(HTML) 4 Page - NXP Semiconductors

 
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September 1991
4
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter;
IC = 5 mA
50
−−
V
V(BR)CEO
collector-emitter breakdown voltage
VBE =0;
IC = 10 mA
27
−−
V
V(BR)EBO
emitter-base breakdown voltage
open collector;
IE = 0.5 mA
3.5
−−
V
ICES
collector-emitter leakage current
VBE =0;
VCE = 27 V
−−
2mA
hFE
DC current gain
VCE = 20 V;
IC = 150 mA
25
−−
ESBR
second breakdown energy
L = 25 mH;
RBE = 10 Ω;
f = 50 Hz
0.5
−−
mJ
Cc
collector capacitance
VCB = 24 V;
IE = Ie =0;
f = 1 MHz
3
pF
Cre
feedback capacitance
VCE = 24 V;
IC = 0;
f = 1 MHz
1.3
pF
Fig.3
DC current gain as a function of collector
current, typical values.
VCE = 20 V; Tj =25 °C.
handbook, halfpage
0
0.5
IC (A)
hFE
100
0
20
40
60
80
0.1
0.2
0.3
0.4
MBK467
Fig.4
Collector capacitance as a function of
collector-base voltage, typical values.
IE =ie = 0; f = 1 MHz.
handbook, halfpage
010
20
30
VCB (V)
Cc
(pF)
8
6
2
0
4
MBK468


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