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BLV99 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BLV99
Description  UHF power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLV99 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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September 1991
2
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
FEATURES
• Emitter-ballasting resistors for an
optimum temperature profile
• Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT172D
envelope with a ceramic cap. It is
designed primarily for use as a driver
stage in base stations in the 900 MHz
communications band. All leads are
isolated from the mounting base.
PINNING - SOT172D
PIN
DESCRIPTION
1
emitter
2
base
3
collector
4
emitter
PIN CONFIGURATION
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common emitter class-B test circuit.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
MODE OF
OPERATION
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηc
(%)
c.w. narrow band
900
24
2
> 8
> 55
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
2
1
4
3
MSB007
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