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BLV99 Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. BLV99
Description  UHF power transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLV99 Datasheet(HTML) 5 Page - NXP Semiconductors

 
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September 1991
5
Philips Semiconductors
Product specification
UHF power transistor
BLV99/SL
APPLICATION INFORMATION
RF performance Tmb = 25 °C in a common emitter class-B test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηc
(%)
c.w. narrow band
900
24
2
> 8
typ. 9.3
> 55
typ. 63
Fig.5
Gain and efficiency as functions of load
power, typical values.
Class-B operation; VCE = 24 V; f = 900 MHz;
Tmb = 25 °C.
handbook, halfpage
10
01
3
PL (W)
Gp
(dB)
Gp
η
C
(%)
η
C
0
2
5
100
0
50
MBK469
Ruggedness in class-B operation
The BLV99/SL is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases under the following conditions:
VCE = 24 V, f = 900 MHz,
Tmb =25 °C, and rated output power.
Fig.6
Load power as a function of drive power,
typical values.
Class-B operation; VCE = 24 V; f = 900 MHz;
Tmb = 25 °C.
handbook, halfpage
0
3
2
1
0
0.1
0.2
0.4
PS (W)
PL
(W)
0.3
MBK470


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