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BLV98CE Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BLV98CE
Description  UHF power transistor
Download  11 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLV98CE Datasheet(HTML) 3 Page - NXP Semiconductors

 
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March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
BLV98CE
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector base voltage
open emitter
50
V
VCEO
collector emitter voltage
open base
27
V
VEBO
emitter base voltage
open collector
3.5
V
IC
collector current
DC or average
1.5
A
ICM
collector current
peak value
f
> 1 MHz
4.5
A
Ptot
total power dissipation
f
> 1 MHz
Tmb =25 °C
40
W
Tstg
storage temperature
−65
150
°C
Tj
operating junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rthj-mb
from junction to mounting base (RF)
4.4
K/W
Rth mb-h
from mounting base to heatsink
0.4
K/W
Fig.2 DC SOAR.
handbook, halfpage
10
1
10−1
MDA449
110
VCE (V)
IC
(A)
102
Tmb = 25 °C
Th = 70 °C
Fig.3 Power/temperature derating.
handbook, halfpage
0
60
40
20
0
40
Ptot
(W)
80
160
120
MDA450
Th (°C)
(1)
(2)
(1) DC or RF operation
(2) short-term operation during mismatch


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