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BLV98CE Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BLV98CE
Description  UHF power transistor
Download  11 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLV98CE Datasheet(HTML) 2 Page - NXP Semiconductors

 
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March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV98CE
FEATURES
• Internal input matching to achieve high power gain
• Implanted ballasting resistors an for optimum
temperature profile
• Gold metallization ensures excellent reliability
DESCRIPTION
NPN silicon planar epitaxial transistor in an SOT-171
envelope, intended for common emitter, class-AB
operation in radio transmitters for the 960 MHz
communications band. The transistor has a 6-lead flange
envelope, with a ceramic cap. All leads are isolated from
the flange.
QUICK REFERENCE DATA
RF performance up to Th =25 °C in a common emitter class-AB circuit.
MODE OF OPERATION
f (MHz)
VCE (V)
PL (W)
GP (dB)
ηc (%)
c.w. class-AB
960
24
15
> 7.5
> 50
PINNING - SOT171A
PIN
SYMBOL
DESCRIPTION
1
e
emitter
2
e
emitter
3
b
base
4
c
collector
5
e
emitter
6
e
emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM141
Top view
e
c
b
1
2
3
4
5
6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.


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