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ZX5T869Z Datasheet(PDF) 4 Page - Zetex Semiconductors

Part No. ZX5T869Z
Description  25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZX5T869Z Datasheet(HTML) 4 Page - Zetex Semiconductors

   
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ZX5T869Z
SEMICO NDUC TORS
ISSUE 2 - JUNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Collector-base breakdown voltage
BVCBO
60
120
V
IC =100 A
Collector-emitter breakdown voltage
BVCER
60
120
V
IC =1 A, RB
1k
Collector-emitter breakdown voltage
BVCEO
25
35
V
IC =10mA*
Emitter base breakdown voltage
BVEBO
7.0
8.1
V
IE =100 A
Collector cut-off current
ICBO
20
0.5
nA
A
VCB = 50V
VCB = 50V, Tamb=100 C
Collector cut-off current
ICER
R
1k
20
0.5
nA
A
VCB = 50V
VCB = 50V, Tamb=100 C
Emitter cut-off current
IEBO
10
nA
VEB =6V
Collector-emitter saturation voltage
VCE(SAT)
25
30
45
105
160
35
45
70
130
200
mV
mV
mV
mV
mV
IC =500mA,IB = 10mA*
IC =1A, IB = 100mA*
IC =1A, IB = 10mA*
IC =2A, IB = 10mA*
IC =6.5A, IB =150mA*
Base-emitter saturation voltage
VBE(SAT)
950
1050
mV
IC =6.5A, IB =150mA*
Base-emitter turn on voltage
VBE(ON)
860
960
mV
IC =6.5A, VCE =1V*
Static forward current transfer ratio
hFE
300
300
200
40
400
450
275
55
IC =10mA, VCE =1V*
IC =1A, VCE =1V*
IC =7A, VCE =1V*
IC =20A,VCE =1V*
Transition frequency
fT
150
IC =100mA,VCE = 10V
f=50MHz
Output capacitance
COBO
48
pF
VCB = 10V, f= 1MHz*
Switching times
tON
tOFF
33
464
ns
IC =1A, VCC = 10V,
IB1 =-IB2 = 100mA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.


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