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SI6862DQ Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI6862DQ Datasheet(HTML) 2 Page - Vishay Siliconix |
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Si6862DQ Vishay Siliconix New Product www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71145 S-00717—Rev. B, 03-Apr-00 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.6 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 70_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 4.5 V 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 5.2 A 0.022 0.026 W Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 4.4 A 0.029 0.036 W Forward Transconductancea gfs VDS = 10 V, ID = 5.2 A 23 S Diode Forward Voltagea VSD IS = 0.9 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg V10 V V 4 5 V I 5 2 A 25 40 C Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 5.2 A 3.7 nC Gate-Drain Charge Qgd 8.1 Turn-On Delay Time td(on) V10 V R 10 W 25 50 Rise Time tr VDD = 10 V, RL = 10 W I1 A V 4 5 V R 6 W 40 80 Turn-Off Delay Time td(off) DD , L ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 80 160 ns Fall Time tf 45 90 Source-Drain Reverse Recovery Time trr IF = 0.9 A, di/dt = 100 A/ms 40 80 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 6 12 18 24 30 0 0.5 1.0 1.5 2.0 2.5 3.0 0 6 12 18 24 30 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 5 thru 3 V TC = –55_C 125 _C 2 V 25 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 1.5 V 2.5 V 1 V |
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