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SI6862DQ Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI6862DQ
Description  Dual N-Channel 20-V (D-S) MOSFET with Current Sense
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI6862DQ Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si6862DQ
Vishay Siliconix
New Product
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 71145
S-00717—Rev. B, 03-Apr-00
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.6
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V
1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V, TJ = 70_C
5
mA
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 4.5 V
30
A
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 5.2 A
0.022
0.026
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 2.5 V, ID = 4.4 A
0.029
0.036
W
Forward Transconductancea
gfs
VDS = 10 V, ID = 5.2 A
23
S
Diode Forward Voltagea
VSD
IS = 0.9 A, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
V10 V V
4 5 V I
5 2 A
25
40
C
Gate-Source Charge
Qgs
VDS = 10 V, VGS = 4.5 V, ID = 5.2 A
3.7
nC
Gate-Drain Charge
Qgd
8.1
Turn-On Delay Time
td(on)
V10 V R
10
W
25
50
Rise Time
tr
VDD = 10 V, RL = 10 W
I1 A V
4 5 V R
6
W
40
80
Turn-Off Delay Time
td(off)
DD
,
L
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
80
160
ns
Fall Time
tf
45
90
Source-Drain Reverse Recovery Time
trr
IF = 0.9 A, di/dt = 100 A/ms
40
80
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0
0.5
1.0
1.5
2.0
2.5
3.0
0
6
12
18
24
30
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 5 thru 3 V
TC = –55_C
125
_C
2 V
25
_C
Output Characteristics
Transfer Characteristics
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
1.5 V
2.5 V
1 V


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