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NTGS4111PT1 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTGS4111PT1
Description  Power MOSFET (-30 V, -4.7 A, Single P-Channel, TSOP-6)
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTGS4111PT1 Datasheet(HTML) 2 Page - ON Semiconductor

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NTGS4111P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−30
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
−17
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −24 V
TJ = 25°C
−1.0
mA
TJ = 125°C
−100
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
±100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−1.0
−3.0
V
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
5.0
mV/
°C
Drain−to−Source On Resistance
RDS(on)
VGS = −10 V, ID = −3.7 A
38
60
m
W
VGS = −4.5 V, ID = −2.7 A
68
110
Forward Transconductance
gFS
VDS = −10 V, ID = −3.7 A
6.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = −15 V
750
pF
Output Capacitance
COSS
140
Reverse Transfer Capacitance
CRSS
130
Total Gate Charge
QG(TOT)
VGS = −10 V, VDD = −15 V,
ID = −3.7 A
15.25
32
nC
Threshold Gate Charge
QG(TH)
0.8
Gate−to−Source Charge
QGS
2.6
Gate−to−Drain Charge
QGD
3.4
SWITCHING CHARACTERISTICS, VGS = −10 V (Note 4)
Turn−On Delay Time
td(ON)
VGS = −10 V, VDD = −15 V,
ID = −1.0 A, RG = 6.0 W
9.0
17
ns
Rise Time
tr
9.0
18
Turn−Off Delay Time
td(OFF)
38
85
Fall Time
tf
22
45
SWITCHING CHARACTERISTICS, VGS = −4.5 V (Note 4)
Turn−On Delay Time
td(ON)
VGS = −4.5 V, VDD = −15 V,
ID = −1.0 A, RG = 6.0 W
11
20
ns
Rise Time
tr
15
28
Turn−Off Delay Time
td(OFF)
28
56
Fall Time
tf
22
50
DRAIN − SOURCE DIODE CHARACTERISTICS
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Diode Voltage
VDS
VGS = 0 V,
IS = −1.0 A
TJ = 25°C
−0.76
−1.2
V
TJ = 125°C
−0.60
Reverse Recovery Time
tRR
VGS = 0 V
dIS/dt = 100 A/ms, IS = −1.0 A
24
60
ns
Charge Time
ta
9.0
Discharge Time
tb
15
Reverse Recovery Charge
QRR
12
nC
3. Pulse Test: pulse width
v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.


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