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NTGS4111P Datasheet(PDF) 4 Page - ON Semiconductor

Part No. NTGS4111P
Description  Power MOSFET (-30 V, -4.7 A, Single P-Channel, TSOP-6)
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTGS4111P Datasheet(HTML) 4 Page - ON Semiconductor

   
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NTGS4111P
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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VDS = 0 V
VGS = 0 V
0
10
10
1400
600
400
200
0
30
−GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
8
2
0
Qg, TOTAL GATE CHARGE (nC)
TJ = 25°C
Coss
Ciss
Crss
ID = −3.7 A
TJ = 25°C
1000
12
8
4
6
QGS
5
800
12
−VGS −VDS
15
4
0.9
1
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
TJ = 25°C
1.0
0.4
0.3
10
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
Figure 10. Diode Forward Voltage vs. Current
5
1200
216
QT
0.5
0.8
0.6
0.1
0.7
0.1
1
100
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.01
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
VGS = −20 V
SINGLE PULSE
TC = 25°C
1 ms
100
ms
dc
0.1
1
10 ms
1300
500
300
100
900
700
1100
20
25
Ciss
Crss
10
0
20
10
610
14
113
9
5
37
11
15
QGD
VGS
VDS
1.1
VGS = 0 V
TJ = −55°C
TJ = 150°C
TJ = 100°C
0.0001
1
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
0.1
D = 0.5
Figure 11. FET Thermal Response
0.2
0.1
0.05
0.02
0.01
Single Pulse
t, TIME (s)
0.01
0.001
1E−06
1E−05
1E−04
1E−07


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