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NTGS4111P Datasheet(PDF) 3 Page - ON Semiconductor

Part No. NTGS4111P
Description  Power MOSFET (-30 V, -4.7 A, Single P-Channel, TSOP-6)
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTGS4111P Datasheet(HTML) 3 Page - ON Semiconductor

   
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NTGS4111P
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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
−8 V
100
°C
0
12
9
1.2
0.8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
0
0.4
Figure 1. On−Region Characteristics
1
10
2.5
23
8
7
1
1.5
0
4.5
Figure 2. Transfer Characteristics
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
15
1000
100
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
210
0.1
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−VGS, GATE VOLTAGE (VOLTS)
−50
0
−25
25
1.0
0.5
50
125
100
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
100000
5
TJ = −55°C
VGS = 0 V
75
150
ID = −3.7 A
VGS = −10 V
25
°C
1.5
−3 V
25
30
−3.2 V
−3.4 V
−4.5 V
0.2
1.6
2
10000
46
8
0
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
2.0
0.05
−ID, DRAIN CURRENT (AMPS)
0.1
0
VGS = −4.5 V
4.0
6
9
10
3.0
TJ = 25°C
VGS = −10 V
TJ = 100°C
TJ = 150°C
3.5
4
2
3
4
5
6
VDS ≥ −10 V
9
35
7
TJ = 25°C
ID = −3.7 A
20
11
8
2
5
10
7
1
4
3.2
2.8
2.4
3.6
4
−3.6 V
−3.8 V
−4 V
−4.2 V
−10V
−6 V
−5 V
−5.5 V
5
11
12


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