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NX25F011B Datasheet(PDF) 7 Page - List of Unclassifed Manufacturers

Part No. NX25F011B
Description  1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE
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Manufacturer  ETC1 [List of Unclassifed Manufacturers]
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NX25F011B Datasheet(HTML) 7 Page - List of Unclassifed Manufacturers

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NX25F011B
NX25F021B
NX25F041B
NexFlash Technologies, Inc.
7
PRELIMINARY NXSF016F-1201
12/12/01 ©
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Serial Flash Memory Array
The NX25F011B, NX25F021B, and NX25F041B Serial
Flash memory arrays are organized as 512, 1024, and 2048
sectors of 264-bytes (2,112 bits) each, as shown in
Figure 4. The block size of the device is 32 sectors, yielding
16, 32 and 64 blocks for the NX25F011B, NX25F021B, and
NX25F041B.
The Serial Flash memory of the NX25F011B, NX25F021B,
and NX25F041B is byte-addressable for read operations.
This allows a single byte, or specified sequence of bytes,
to be read without having to clock an entire 264-byte sector
out of the device. Data can be read directly from a sector
in the Flash memory array by using a
Read from Sector
command.
Data can be written to the Flash memory array one sector
(264-bytes) at a time through the Serial SRAM using a
Write
to Sector command or a Transfer SRAM to Sector com-
mand. No pre-erase is needed. Instead, the device
incorporates an auto-erase-before-write feature that
automatically erases the addressed sector at the beginning
of the write operation. After a sector has been written, the
memory array will become busy while it is programming the
specified non-volatile memory cells of that sector. This
busy time will not exceed tWP during which time the Flash
array is unavailable for read or write access. The device
can be tested to determine the array’s availability using
the Ready/Busy status that is available during most read
commands, through the status register, or on the
Ready/Busy pin.
After sector programming is complete and the device is
ready, it is recommended to verify the data in the sector
with the data in the SRAM using the compare command,
(see Write/ Verify Flow towards the end of this data sheet).
Byte 0
000H
Sector 0
000H
25F011
S[8:0]
25F041
S[10:0]
Sector Address:
Byte Address: B[8:0]
Block 0
Sector 31
1FH
Block 64
Sector 2047
7FFH
Block 16
Sector 511
1FFH
Sector 2016
7E0H
Sector 480
1E0H
Byte1
001H
Byte 2-261
002H-105H
1M-bit, 2M-bit, or 4M-bit Serial Flash Memory Array
512, 1024, and 2048 Byte-Addressable Sectors
of 264-Bytes each.
Organized in 16, 32 and 64
blocks of 32 sectors per block.
Byte 262
106H
Byte 263
107H
Byte1
001H
Byte 2-261
002H-105H
Byte 262
106H
Byte 0
000H
Byte 263
107H
Byte 0
000H
Byte 1
001H
Byte 2-261
002H-105H
Byte 262
106H
Byte 0
000H
Byte 1
001H
Byte 2-261
002H-105H
Byte 262
106H
Byte 263
107H
Byte 263
107H
Block 0
Sector 31
1FH
Sector 0
000H
Sector 0
000H
25F021
S[9:0]
Block 0
Sector 31
1FH
Block 32
Sector 1023
3FFH
Sector 992
3E0H
Figure 4. NX25F011B, NX25F021B, and NX25F041B Serial Flash Memory Array


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