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NX25F011B Datasheet(PDF) 4 Page - List of Unclassifed Manufacturers

Part No. NX25F011B
Description  1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE
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Maker  ETC1 [List of Unclassifed Manufacturers]
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NX25F011B Datasheet(HTML) 4 Page - List of Unclassifed Manufacturers

 
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NexFlash Technologies, Inc.
PRELIMINARY NXSF016F-1201
12/12/01 ©
NX25F011B
NX25F021B
NX25F041B
FEATURES
• Flash Storage for Resource-Limited Systems
– Ideal for portable/mobile and microcontroller-based
applications that store voice, text, and data
• 0.35µ
NexFlash Memory Technology
– 1M/2M/4M-bit with 512/1024/2048 sectors
– Small 264-byte sectors
– Erase/Write time of 7.5 ms/sector (typical)
– Optional 8KB (32 sector) block erase for faster
programming
• Ultra-low Power for Battery-Operation
– Single 5V or 3V supply for read and erase/write
– 1 mA standby current, 2.5 mA active @ 3V (typical)
– Low frequency read command for lower power
• 4-pin SPI Serial Interface
– Easily interfaces to popular microcontrollers
– Clock operation as fast as 20 MHz
• On-chip Serial SRAM
– Single 264-byte Read/Write SRAM buffer
– Use in conjunction with or independent of Flash
– Off-loads RAM-limited microcontrollers
• Special Features for Media-Storage Applications
– Byte-level addressing for reads and SRAM writes
– Transfer or compare sector to SRAM
– Versatile hardware and software write-protection
– In-system electronic part number option
– Removable Serial Flash Module package option
– Serial Flash Development Kit
DESCRIPTION
The NX25F011B, NX25F021B, and NX25F041B Serial
Flash memories provide a storage solution for systems
limited in power, pins, space, hardware, and firmware
resources. They are ideal for applications that store voice,
text, and data in a portable or mobile environment. Using
NexFlash's patented single transistor EEPROM cell, the
devices offer a high-density, low-voltage, low-power, and
cost-effective non-volatile memory solution. The devices
operate on a single 5V or 3V (2.7V-3.6V) supply for Read
and Erase/Write with typical current consumption as low as
2.5 mA active and less than 1
µA standby. Sector
erase/write speeds as fast as 7.5 ms increase system
performance, minimize power-on time, and maximize
battery life.
The NX25F011B, NX25F021B, and NX25F041B provide
1M-bit, 2M-bit, and 4M-bit of flash memory organized as 512,
1024, or 2048 sectors of 264 bytes each. Each sector is
individually addressable through basic serial-clocked com-
mands. The 4-pin SPI serial interface works directly with
popular microcontrollers. Special features include: on-chip
serial SRAM, byte-level addressing, double-buffered sector
writes, transfer/compare sector to SRAM, hardware and
software write protection, alternate oscillator frequency, elec-
tronic part number, and removable Serial Flash Module
package option. Development is supported with the
PC-based SFK-SPI Serial Flash Development Kit.


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