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DFS04M Datasheet(PDF) 4 Page - STMicroelectronics |
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DFS04M Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 42 page  AN1262 APPLICATION NOTE 4/42 and maximum output power) does not exceed 62-64%. The other limitation is that the sum of the max- imum input voltage, reflected voltage and overvoltage spike - due to the leakage inductance - must be below the breakdown of the internal MOSFET (700 V min.). Some margin needs also to be considered: at least 50V is recommended to take the forward recovery of the diode of the clamp circuit and param- eter spread into account. Figure 2 illustrates schematically how the drain voltage is apportioned. The suggested value of VR is 130 V: it leads to a maximum drain voltage slightly exceeding 500 V in 220VAC or WRM applications, and about 320 V in 110 VAC application, thus leaving enough room for an efficient leakage inductance demagnetization (see below). The maximum duty cycle will be about 60% in 110VAC and WRM applications, and close to 36% in 220 VAC applications. Figure 2. Drain voltage composition. s Leakage inductance overvoltage. The energy stored in the mutual inductance of the transformer at the primary side is not completely transferred to the secondary, after MOSFET turn-off, until the leakage inductance is demagnetized. This delays and makes inefficient the energy transfer from primary to sec- ondary. To minimize this noxious effect the voltage across the leakage inductance (the leakage induct- ance spike) that resets the inductance itself should be as high as possible. Obviously, this is limited by the maximum allowable drain voltage. With the reflected voltage selected as previously discussed, it is possible to allow about 140 V extra voltage in 220 VAC or WRM applications and much more in 110 VAC applications (see fig. 2). This will affect the design of the clamp circuit. s Transformer efficiency. By definition, it is the ratio of the power delivered by the secondary winding to the power entering the primary. The secondary power includes the converter output power and the one dissipated in the secondary rectifier. Besides the secondary one, the primary power includes the one dissipated inside the transformer and that not transferred to the secondary side and dissipated on the leakage inductance. For typical transformers used in converters based on the L6590 family IC's, typical values of efficiency ranges between 88% and 95%, depending on the power level and on the construc- tion technique. Efficiency increases with the power level and by using winding interleaving construction technique. For consistency, check that the input power of the transformer be less than the converter input power. s Device supply voltage. The supply voltage range of the IC spans from 7 to 16.5 V. Such a wide range is envisaged to accommodate the variation that the voltage generated by the self-supply winding may Vin VR Vspike Clamp Diode forward recovery 700 V 374 V 187 V 504 V 317 V ≤ 650 V margin ON OFF Leak. Inductance demagnetization Current flows at the secondary side Prim. Inductance resonates with drain capacitance Leak. Inductance resonates with drain capacitance Transformer demagnetised |
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