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IRL1004SPBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRL1004SPBF
Description  HEXFET Power MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRL1004SPBF Datasheet(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL1004L) is available for low-
profile application.
S
D
G
VDSS = 40V
RDS(on) = 0.0065Ω
ID = 130A
…
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
07/19/04
www.irf.com
1
IRL1004SPbF
IRL1004LPbF
D2Pak
IRL1004S
TO-262
IRL1004L
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)*
–––
40
Thermal Resistance
°C/W
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
†
130
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
†
92
…
A
IDM
Pulsed Drain Current
†
520
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
†
700
mJ
IAR
Avalanche Current

78
A
EAR
Repetitive Avalanche Energy

20
mJ
dv/dt
Peak Diode Recovery dv/dt
Ġ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
°C
Absolute Maximum Ratings
l Logic-Level Gate Drive
PD - 95575


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