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IRG4PC60F-PPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRG4PC60F-PPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR (Fast Speed IGBT)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PC60F-PPBF Datasheet(HTML) 2 Page - International Rectifier

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IRG4PC60F-PPbF
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Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
—
290 340
IC = 40A
Qge
Gate - Emitter Charge (turn-on)
—
40
47
nC
VCC = 400V
See Fig. 8
Qgc
Gate - Collector Charge (turn-on)
—
100 130
VGE = 15V
td(on)
Turn-On Delay Time
—
42
—
tr
Rise Time
—
66
—
TJ = 25°C
td(off)
Turn-Off Delay Time
—
310 360
IC = 60A, VCC = 480V
tf
Fall Time
—
170 220
VGE = 15V, RG = 5.0Ω
Eon
Turn-On Switching Loss
—
0.30
—
Energy losses include "tail"
Eoff
Turn-Off Switching Loss
—
4.6
—
mJ
See Fig. 10, 11, 13, 14
Ets
Total Switching Loss
—
4.96.3
td(on)
Turn-On Delay Time
—
39—
TJ = 150°C,
tr
Rise Time
—
66
—
IC = 60A, VCC = 480V
td(off)
Turn-Off Delay Time
—
470
—
VGE = 15V, RG = 5.0Ω
tf
Fall Time
—
300
—
Energy losses include "tail"
Ets
Total Switching Loss
—
8.8
—
mJ
See Fig. 13, 14
LE
Internal Emitter Inductance
—
13
—
nH
Measured 5mm from package
Cies
Input Capacitance
— 6050 —
VGE = 0V
Coes
Output Capacitance
—
360
—
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
—
66
—
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „
16
—
—
V
VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.13
—
V/°C VGE = 0V, IC = 1.0mA
—
1.5
1.8
IC = 60A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
—
1.7
—
IC = 90A
See Fig.2, 5
—
1.5
—
IC = 60A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-11
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance …
36
69—
S
VCE = 100V, IC = 60A
—
—
250
VGE = 0V, VCE = 600V
—
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
… Pulse width 5.0µs, single shot.
† When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
‡ Refer to application note # 1023, "Surface Mounting of
Larger Devices."
Notes:
 Repetitive rating; V
GE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, Rg = 5.0W.
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.


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