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NTTD4401F Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NTTD4401F
Description  FETKY Power MOSFET and Schottky Diode
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTTD4401F Datasheet(HTML) 2 Page - ON Semiconductor

   
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NTTD4401F
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SCHOTTKY DIODE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
V
20
V
Average Forward Current (Rated VR, TA = 100°C)
IO
1.0
A
Peak Repetitive Forward Current (Note 3)
IFRM
2.0
A
Non−Repetitive Peak Surge Current (Note 4)
IFSM
20
A
THERMAL RESISTANCE RATINGS
FET
Schottky
Rating
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 5)
RθJA
88
135
°C/W
Junction−to−Ambient – Steady State (Note 6)
RθJA
160
250
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V
−20
V
Zero Gate Voltage Drain Current (Note 7)
IDSS
VGS = 0 V, VDS = −16 V
−1.0
mA
VGS = 0 V, TJ = 125°C, VDS = −16 V
−25
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−0.5
−1.5
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
2.5
mV/
°C
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −3.3 A
70
90
m
W
()
VGS = −2.5 V, ID = −1.2 A
100
150
Forward Transconductance
gFS
VDS = −10 V, ID = −2.7 A
4.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
V
0V f
10MH
550
750
pF
Output Capacitance
COSS
VGS = 0 V, f = 1.0 MHz,
VDS = −16 V
200
300
Reverse Transfer Capacitance
CRSS
VDS = −16 V
50
175
Total Gate Charge
QG(TOT)
V
45V V
16 V
10
18
nC
Gate−to−Source Gate Charge
QGS
VGS = −4.5 V, VDS = −16 V,
ID = −3.3 A
1.5
3.0
Gate−to−Drain “Miller’’ Charge
QGD
ID = −3.3 A
5.0
10
SWITCHING CHARACTERISTICS
Turn−On Delay Time
td(ON)
11
20
ns
Rise Time
tr
VGS = −4.5 V, VDD = −10 V,
35
65
Turn−Off Delay Time
td(OFF)
VGS = −4.5 V, VDD = −10 V,
ID = −3.3 A, RG = 6.0 W
33
60
Fall Time
tf
29
55
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = −2.0 A
−0.88
−1.0
V
Reverse Recovery Time
tRR
V
0V d /dt
100 A/
37
50
ns
Charge Time
ta
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −3.3 A
16
Discharge Time
tb
IS = −3.3 A
21
Reverse Recovery Charge
QRR
0.025
0.05
nC
3. Rated VR, square wave, 20 kHz, TA = 105°C.
4. Surge applied at rated load conditions, half−wave, single phase, 60 Hz.
5. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
6. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).
7. Body diode leakage current.


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