Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

NTTD4401F Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NTTD4401F
Description  FETKY Power MOSFET and Schottky Diode
Download  8 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo 

NTTD4401F Datasheet(HTML) 1 Page - ON Semiconductor

   
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 3
1
Publication Order Number:
NTTD4401F/D
NTTD4401F
FETKYtPower MOSFET
and Schottky Diode
−20 V, −3.3 A P−Channel with 20 V,
1.0 A Schottky Diode, Micro8
t Package
The FETKY product family incorporates low RDS(on), true logic
level MOSFETs packaged with industry leading, low forward drop, low
leakage Schottky Barrier Diodes to offer high efficiency components in
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Features
Low V
F and Low Leakage Schottky Diode
Lower Component Placement and Inventory Costs along with Board
Space Savings
Logic Level Gate Drive – Can be Driven by Logic ICs
Applications
Buck Converter
Synchronous Rectification
Low Voltage Motor Control
Load Management in Battery Packs, Chargers, Cell Phones, and
other Portable Products
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
−10
V
Continuous Drain
Current (Note 1)
TA = 25°C
ID
3.3
A
Current (Note 1)
TA = 100°C
2.1
Power Dissipation
Steady
TA = 25°C
PD
1.42
W
Power Dissi ation
(Note 1)
Steady
State
TA 25 C
PD
1.42
W
Continuous Drain
Current (Note 2)
TA = 25°C
ID
2.4
A
Current (Note 2)
TA = 100°C
1.5
Power Dissipation
Steady
TA = 25°C
PD
0.78
W
Power Dissi ation
(Note 2)
Steady
State
TA 25 C
PD
0.78
W
Pulsed Drain
Current
t = 10
ms
IDM
10
A
Operating Junction and Storage
Temperature
TJ, TSTG
−55 to 150
°C
Single Pulse Drain−to−Source
Avalanche Energy
Starting TA = 25°C (t v 10 s)
EAS
150
mJ
Lead Temperature for Soldering Purposes
(1/8
″ from case for 10 s)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.172 in sq).
Device
Package
Shipping†
ORDERING INFORMATION
NTTD4401FR2
Micro8
4000/Tape & Reel
Micro8
CASE 846A
G
D
P−Channel MOSFET
S
C
A
SCHOTTKY DIODE
−20 V
20 V
100 m
W @ −2.7 V
70 m
W @ −4.5 V
600 mV @ IF = 2.0 A
RDS(on) Typ
2.0 A
ID Max
V(BR)DSS
MOSFET PRODUCT SUMMARY
SCHOTTKY DIODE SUMMARY
VR Max
VF Max
IF Max
−3.3 A
−2.7 A
1
8
MARKING DIAGRAM
& PIN CONNECTIONS
Y
= Year
WW = Work Week
BG = Device Code
8
7
6
5
1
2
3
4
ANODE
ANODE
SOURCE
GATE
CATHODE
CATHODE
DRAIN
DRAIN
(Top View)
YWW
BG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
SI7842DPDual N-Channel 30-V D-S MOSFET with Schottky Diode 1 2 3 4 5 Vishay Siliconix
IRLZ4SHEXFET POWER MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF3704ZCSPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRHM57Z60RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA 1 2 3 4 5 MoreInternational Rectifier
IRFP150VPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
DSEP2X91-06AHiPerFRED Epitaxial Diode with soft recovery 1 2 IXYS Corporation
FAN41131.2V 36MHz Low Power Rail-to-Rail Amplifier 1 2 3 4 5 MoreFairchild Semiconductor
TDPXRack and Panel Filter Connectors 1 2 3 4 5 MoreITT Industries
HFA25TB60SUltrafast Soft Recovery Diode 1 2 3 4 5 MoreInternational Rectifier

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn