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NTTD4401F Datasheet(PDF) 5 Page - ON Semiconductor

Part No. NTTD4401F
Description  FETKY Power MOSFET and Schottky Diode
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTTD4401F Datasheet(HTML) 5 Page - ON Semiconductor

   
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NTTD4401F
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TYPICAL ELECTRICAL CHARACTERISTICS
tr
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
td (off)
td (off)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
Figure 11. Diode Forward Voltage
vs. Current
Figure 12. Diode Reverse Recovery Waveform
VDS = 0 V
VGS = 0 V
TJ = 25°C
Ciss
Crss
Coss
Ciss
Crss
VDD = −10 V
ID = −1.2 A
VGS = −2.7 V
tf
td (on)
tr
tf
VGS = 0 V
TJ = 25°C
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1
0
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.8
1.2
1.6
2
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
100
10
1.0
10
100
10
100
10
1.0
100
1000
RG, GATE RESISTANCE (W)
20
10
1500
1200
50
5
10
15
900
600
300
0
RG, GATE RESISTANCE (W)
VDD = −10 V
ID = −3.3 A
VGS = −4.5 V
td (on)
−VDS
−VGS
QT
Q2
Q1
VGS
ID = −3.3 A
TJ = 25°C
VDS
0
8
0
3
5
1
2
4
24
6
10
14
Qg, TOTAL GATE CHARGE (nC)
20
18
16
14
12
10
8
6
4
2
0
12


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