IS41C16128

6

Integrated Silicon Solution, Inc.

08/20/98

Symbol Parameter

Test Condition

Speed

Min.

Max.

Unit

Input Leakage Current

–10

10

µA

Other inputs not under test = 0V

Output Leakage Current

Output is disabled (Hi-Z)

–10

10

µA

Output High Voltage Level

2.4

—

V

Output Low Voltage Level

—

0.4

V

Stand-by Current: TTL

—2

mA

Stand-by Current: CMOS

—

1

mA

Operating Current:

RAS, LCAS, UCAS,

-35

—

230

mA

-40

—

130

Average Power Supply Current

-45

—

120

-50

—

110

-60

—

100

Operating Current:

-35

—

220

mA

-40

—

90

Average Power Supply Current

-45

—

85

-50

—

80

-60

—

70

Refresh Current:

-35

—

230

mA

-40

—

130

Average Power Supply Current

-45

—

120

-50

—

100

-60

—

100

Refresh Current:

RAS, LCAS, UCAS Cycling

-35

—

230

mA

-40

—

130

Average Power Supply Current

-45

—

120

-50

—

100

-60

—

100

Notes:

1. An initial pause of 200

µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device

operation is assured. The eight

2. Dependent on cycle rates.

3. Specified values are obtained with minimum cycle time and the output open.

4. Column-address is changed once each EDO page cycle.

5. Enables on-chip refresh and address counters.