IS41C16128

Integrated Silicon Solution, Inc.

5

08/20/98

Symbol

Parameters

Rating

Unit

Voltage on Any Pin Relative to GND

–1.0 to +7.0

V

Supply Voltage

–1.0 to +7.0

V

Output Current

50

mA

Power Dissipation

1

W

Operation Temperature

Com.

0 to +70

°C

Ind.

–40 to +85

Storage Temperature

–55 to +125

°C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Supply Voltage

4.5

5.0

5.5

V

Input High Voltage

2.4

—

VCC + 1.0

V

Input Low Voltage

–1.0

—

+0.8

V

Ambient Temperature

Com.

0

—

+70

°C

Ind.

–40

—

+85

Symbol

Parameter

Max.

Unit

Input Capacitance: A0-A8

5

pF

Input Capacitance:

RAS, UCAS, LCAS, WE, OE

7pF

Data Input/Output Capacitance: I/O0-I/O15

7

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.